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Metal Oxide, Group V-VI Chalcogenides and GaN/AlGaN Photodetectors

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dc.contributor.advisor Mulpuri, Rao
dc.contributor.author Hasan, Md Rezaul
dc.creator Hasan, Md Rezaul
dc.date.accessioned 2017-01-29T01:17:29Z
dc.date.available 2017-01-29T01:17:29Z
dc.date.issued 2016
dc.identifier.uri https://hdl.handle.net/1920/10625
dc.description.abstract Structural, electrical and optical properties of metal oxide and Group V-VI chalcogenide based semiconductor materials and their optoelectronic response were studied when used as UV-Visible-NIR photodetectors. Optimization of processing steps was done to achieve better quality films in terms of crystallinity and stoichiometry.The films were thoroughly characterized for their structural, electrical and optical behavior. For visible blind- UV detection, transparent metal oxide (TMO) based photodiodes were fabricated and for UV-NIR broadband detection of wavelength, Group V-VI chalcogenide nanostructure photodiodes were fabricated.
dc.format.extent 140 pages
dc.language.iso en
dc.rights Copyright 2016 Md Rezaul Hasan
dc.subject Electrical engineering en_US
dc.subject Materials Science en_US
dc.subject Antimony Selenide en_US
dc.subject Chalcogenide en_US
dc.subject GaN/AlGaN HEMT en_US
dc.subject Metal Oxide en_US
dc.subject THz imaging en_US
dc.subject UV photodetector en_US
dc.title Metal Oxide, Group V-VI Chalcogenides and GaN/AlGaN Photodetectors
dc.type Dissertation
thesis.degree.level Ph.D.
thesis.degree.discipline Electrical and Computer Engineering
thesis.degree.grantor George Mason University


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